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MRF5S21045MR1 MRF5S21045MBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
?20
?8
?11
?14
?17
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
?22
?10
?13
?16
?19
2220
2060
IRL
Gps
13.4
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout
= 10 Watts
2200
2180
2160
2140
2120
2100
2080
15.2
15
?44
32
28
24
20
16
?32
?36
?40
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout
= 20 Watts
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
11
17
1
IDQ
= 800 mA
650 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
15
13
12
10
?40
?10
1
Pout, OUTPUT POWER (WATTS) PEP
10
?20
?30
100
?60
?50
η
D
, DRAIN
EFFICIENCY (%)
ηD
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
14.8
14.6
14.4
14.2
14
13.8
13.6
?28
VDD= 28 Vdc, Pout
= 10 W (Avg.), I
DQ
= 500 mA
2?Carrier W?CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
2220
2060 22002080
2100
2120
2140
2160
2180
13
ACPR
14.8
?34
46
42
38
34
30
?22
?26
?30
14.4
14.2
14
13.8
13.6
13.4
13.2
?18
14.6
IRL
Gps
IM3
ηD
VDD= 28 Vdc, Pout
= 20 W (Avg.), I
DQ
= 500 mA
2?Carrier W?CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
16
14
500 mA
350 mA
200 mA
IDQ
= 200 mA
650 mA
800 mA
500 mA
350 mA
VDD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
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相关代理商/技术参数
MRF5S21045NBR1
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MRF5S21090HR3
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MRF5S21090HR3_06
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功能描述:射频MOSFET电源晶体管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21090HSR3
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